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| MMBTSB1198 PNP Silicon Epitaxial Planar Transistor Low frequency transistor The transistor is subdivided into two groups Q and R, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 80 80 5 0.5 200 150 -55 to +150 Unit V V V A mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 3 V, -IC = 100 mA Collector Cutoff Current at -VCB = 50 V Emitter Cutoff Current at -VEB = 4 V Collector-Base Breakdown Voltage at -IC = 50 A Emitter-Base Breakdown Voltage at -IE = 50 A Collector-Emitter Breakdown Voltage at -IC = 2 mA Collector-Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Output Capacitance at -VCB = 10 V, f = 1 MHz Transition Frequency at -VCE = 10 V, IE = 50 mA, f = 100 MHz Q R Symbol hFE hFE -ICBO -IEBO -VCBO -VEBO -VCEO -VCE(sat) Cob fT Min. 120 180 80 5 80 Typ. 11 180 Max. 270 390 0.5 0.5 0.5 Unit A A V V V V pF MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 21/12/2005 |
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